? by semikron 0898 b 6 C 277 absolute maximum ratings values symbol conditions 1) units v ces v cgr i c ; i cn i cm v ges p tot t j , (t stg ) v isol humidity climate r ge = 20 k w t case = 25/ 75 c t case = 25/75 c; t p = 1 ms per igbt, t case = 25 c ac, 1 min. 4) din 40 040 din iec 68 t.1 1700 1700 540 / 400 1080 / 800 20 2780 C40 ... +150 (125) 3400 class f 40/125/56 v v a a v w c v inverse diode 8) i f = Ci c i fm = Ci cm i fsm i 2 t t case = 25/75 c t case = 25/75 c; t p = 1 ms t p = 10 ms; sin.; t j = 150 c t p = 10 ms; t j = 150 c 380 / 275 1080/ 800 2900 42000 a a a a 2 s characteristics symbol conditions 1) min. typ. max. units v (br)ces v ge(th) i ces i ges v cesat g fs v ge = 0, i c = 6 ma v ge = v ce , i c = 20 ma v ge = 0 t j = 25 c v ce = v ces t j = 125 c v ge = 20 v, v ce = 0 i c = 300 a v ge = 15 v; i c = 400 a t j = 25 (125) c v ce = 20 v, i c = 300 a 3 v ces 4,8 C C C C C 108 C 5,5 0,1 8 C 2,8(3,25) 3,3(3,6) 150 C 6,2 0,6 C 100 C C C v v ma ma na v v s c chc c ies c oes c res l ce per igbt v ge = 0 v ce = 25 v f = 1 mhz C C C C C C 22 3 1 C 1,4 C C C 20 nf nf nf nf nh t d(on) t r t d(off) t f e on e off v cc = 1200 v v ge = C15 v / +15 v 3) i c = 300 a, ind. load r gon = r goff = 5,6 w t j = 125 c l s = 60 nh C C C C C C 120 130 1000 140 220 150 C C C C C C ns ns ns ns mws mws inverse diode 8) v f = v ec v f = v ec v to r t i rrm q rr i f = 300 a v ge = 0 v; i f = 400 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 300 a; t j = 25 (125) c 2) i f = 300 a; t j = 25 (125) c 2) C C C C C C 2,2(1,9) 2,4(2,25) 1,3 3 120(170) 30(72) 2,7(2,4) C 1,5 3,2 C C v v v m w a m c thermal characteristics r thjc r thjc r thch per igbt per diode d per module C C C C C C 0,045 0,125 0,038 c/w c/w c/w semitrans ? m low loss igbt modules skm 400 ga 174 d preliminary data features ? mos input (voltage controlled) ? n channel, homogeneous silicon structure (npt- non punch- through igbt) ? low inductance case ? low tail current with low temperature dependence ? high short circuit capability, self limiting to 4 * i cnom ? latch-up free ? fast & soft inverse cal diodes 8) ? isolated copper baseplate using dcb direct copper bonding ? large clearance (13 mm) and creepage distances (20 mm) typical applications ? ac inverter drives on mains 575 - 750 v ac ? dc bus voltage 750 - 1200 v dc ? public transport (auxiliary syst.) ? switching (not for linear use) 1) t case = 25 c, unless otherwise specified 2) i f = C i c , v r = 1200 v, Cdi f /dt = 1500 a/ m s, v ge = 0 v 3) use v geoff = -5 ... -15 v 4) option v isol = 4000v/1 min add suffix ?h4 - on request 8) cal = controlled axial lifetime technology cases and mech. data ? b6-278 ga semitrans 4
? by semikron b 6 C 278 skm 400 ga 174 d 0898 semitrans 4 case d 59 ul recognition file no. e 63 532 applied for skm 400 ga 174 d dimensions in mm case outline and circuit diagram mechanical data symbol conditions values units min. typ. max. m 1 m 2 a w to heatsink, si units (m6) to heatsink, us units for terminals, si units (m6/m4) for terminals, us units 3 27 2,5/1,1 22/10 ? ? ? ? ? ? ? ? 5 44 5/2 44/18 5x9,81 330 nm lb.in. nm lb.in. m/s 2 g this is an electrostatic discharge sensitive device (esds). please observe the international standard iec 747-1, chapter ix. three devices are supplied in one semibox b without mounting hard- ware, which can be ordered separa- tely under ident no. 33321100 (for 10 semitrans 4) larger packing units of 12 or 20 pie- ces are used if suitable accessories ? b 6 ? 4 semibox ? c ? 1. option skm 400 ga 174 ds on request: terminal 4 = collector sense v ce , add suffix ?s. ? b 6 ? 212
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